As semiconductor technology advances, Gallium Nitride (GaN) has become a core material in optoelectronics, radio frequency (RF) communication, and power devices due to its excellent electrical and optical properties. Among these, GaN-on-Sapphire epitaxial wafers have become the mainstream choice for manufacturing blue LEDs, lasers, ultraviolet (UV) detectors, and other high-performance devices due to their cost-effectiveness and mature processing technology.

With the rapid advancement of third-generation semiconductor technologies, Silicon Carbide (SiC) has emerged as a key material due to its wide bandgap, high thermal conductivity, high breakdown electric field, and excellent chemical stability. These properties make SiC an ideal choice for extreme environments involving high voltage, high frequency, and high temperature. One of the most important parameters that determine SiC substrate performance is doping type. This article provides an in-depth overview of common doping methods and their application scenarios, serving as a guide for device design and material selection.

As third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) continue to gain traction in high-power electronic applications, researchers are actively exploring the next generation of wide-bandgap semiconductors. Among these, gallium oxide (Ga₂O₃) has emerged as a promising candidate due to its ultra-wide bandgap (4.8–5.3 eV) and exceptionally high breakdown electric field (>8 MV/cm). The successful fabrication of 4-inch and larger Ga₂O₃ single crystals has further accelerated its industrial development.

With the continuous advancement of power electronics, RF devices, and optoelectronic technologies, the demand for high-performance semiconductor materials is increasing. Silicon carbide (SiC), with its superior physical and electrical properties, has become a leading third-generation semiconductor material. Among them, SiC epitaxial wafers excel in high-voltage, high-temperature, and high-frequency applications, making them essential in power electronics and communication fields.

The selection of substrate materials plays a crucial role in the development of high-frequency, high-power RF (radio frequency) devices. Single-crystal sapphire (α-Al₂O₃), with its exceptional physical and chemical properties—such as low dielectric loss, high thermal conductivity, superior hardness, and high-temperature resistance—has demonstrated significant value in the RF field. This article explores the key advantages of sapphire in RF applications, typical device solutions, and future development trends.

Silicon carbide (SiC), gallium nitride (GaN), and sapphire (Al₂O₃) are essential materials in semiconductor, optoelectronic, and high-power electronic devices due to their exceptional physical and chemical properties. However, their high hardness and chemical stability make processing challenging. Traditional mechanical polishing (MP) and chemical mechanical polishing (CMP) have limitations in surface quality and damage layer control. Therefore, exploring advanced polishing technologies to enhance surface quality and minimize damage layers is crucial for improving device performance.

As electronic technology continues to advance, wide-bandgap semiconductor materials are increasingly being applied in various fields, especially in electronic devices that operate under high power, high frequency, high temperature, and high radiation environments. Among these materials, Silicon Carbide (SiC) has become a critical choice for the next generation of semiconductors due to its excellent thermal conductivity, high breakdown electric field strength, radiation resistance, and high-temperature performance. The epitaxial technology of SiC, particularly the Metal-Organic Chemical Vapor Deposition (MOCVD) technique, is key to realizing high-performance SiC devices.

With the rapid advancement of third-generation semiconductor technology, silicon carbide (SiC) wafers have become a core material in power electronics, RF devices, and semiconductor applications due to their superior high-temperature, high-voltage, and high-frequency performance. Today, we will provide a concise introduction to the SiC wafer manufacturing process, accompanied by a visual diagram for better understanding.

In semiconductor manufacturing, wafer substrates serve as the fundamental material for integrated circuits (ICs), optoelectronic devices, and power electronics. Precise alignment is crucial during fabrication, and the industry employs two primary identification methods: flat edges (Flat) and notches (Notch). These markers indicate crystallographic orientation and doping type, ensuring proper positioning in semiconductor processes.

With the increasing demand for high-performance gallium nitride (GaN) materials in power electronics, RF devices, and optoelectronics, the efficient production of large-size, high-quality, low-defect GaN single crystals has become a focal point in the industry. Among various growth techniques, Hydride Vapor Phase Epitaxy (HVPE) stands out as the leading method for GaN substrate fabrication due to its high growth rate, low defect density, and cost-effectiveness. This article provides an in-depth overview of the HVPE process, including its principles, growth mechanism, technological advantages, and its crucial role in the fabrication of freestanding GaN substrates.