I. Preface: Interfacial Thermal Resistance, the Invisible Bottleneck for Power Device Heat DissipationDuring the R&D and thermal design of power devices, most enterprises only focus on the thermal conductivity of bulk substrate materials, while long‑term overlooking two core indicators: the thermal conductivity of epi

I. Preface: Heat Dissipation of High-Power Devices — The Core Industry Pain PointWith the continuous upgrading of new energy vehicles, photovoltaic inverters, energy storage equipment, and RF high-power semiconductor devices, industry products are comprehensively iterating toward high voltage, large current, and

The surface flatness and lattice integrity of silicon carbide substrates are core substrate indicators determining the performance of high-end power devices. In the fields of 800V high-voltage new energy vehicles, AI computing data centers and high-voltage photovoltaic energy storage, the requirements for energy effici

IntroductionAs the core cornerstone of the third-generation semiconductor industry, silicon carbide (SiC) substrates are essential base materials for high-end devices such as high-voltage platforms of new energy vehicles, photovoltaic energy storage inverters, and AI server power supplies. They directly determine the w

The classic Surface Activated Bonding (SAB) process fundamentally solves the core thermal damage problem in SiC substrate bonding. With the explosive development of the third-generation semiconductor industry, 4-inch and 6-inch SiC substrates have become mainstream market products, while 8-inch substrates are gradually

Silicon carbide (SiC) substrates serve as core base materials for third-generation semiconductor power and radio frequency (RF) devices. The flatness, lattice integrity, interfacial stress, and bonding stability of substrates directly determine device yield and service life. A modified Surface Activated Bonding (SAB) t

1. Destructive Inspection — Calibration Benchmark for Non-Destructive Detection of Quartz WafersDestructive inspection physically removes and chemically etches the surface layer of quartz substrate wafers to fully expose the subsurface damage layer (SSD). This method enables intuitive observation of internal micr

1. Invisible Performance Killer Hidden Beneath the Surface of Optical ComponentsFeaturing an ultra-low coefficient of thermal expansion, high transmittance across ultraviolet and infrared bands, excellent chemical inertness and superior optical uniformity, fused silica serves as a core optical substrate for inertial co

1. IntroductionAccurate dielectric characterization is the foundation of millimeter-wave device development. Traditional resonant cavity and optical measurement methods have inherent limitations: resonant testing only supports discrete frequency points; optical testing cannot reproduce chip-level quasi-TEM transmission

1. IntroductionWith the rapid iteration of 6G communication, millimeter-wave radar and terahertz devices, operating frequencies have extended to the 100–325 GHz sub-millimeter band. Traditional substrates such as silicon, ceramic and ordinary glass suffer from high dielectric loss, severe dispersion and poor proc