Language

SiC Substrate wafer

SiC Substrate wafer

Language

Follow us

linkdin

Blogs

About Us

Blogs

HOME > ABOUT US > Blogs

8inch Silicon Carbide Ingot

published on 2025-04-24

8inch Silicon Carbide Ingot can be customized

4H-N Type
Diameter:200mm

Thickness: 12.88mm

As follow:

Share

Hot news

3C-SiC Substrates: Unlocking the Future of High-Performance Electronics

Among the silicon carbide (SiC) family, 3C-SiC (also known as cubic silicon carbide or &...

Learn more >>
The Good Thermal Conductivity of 4H Semi-Insulating SiC Wafer in power electronics, renewable energy

In the realm of semiconductor materials, 4H Semi-insulating SiC wafer stand out with the...

Learn more >>
Comparison of Dummy, Research, and Production Grade Silicon Carbide Substrates

Silicon carbide (SiC) substrates are available in multiple quality grades tailored to di...

Learn more >>

We Provide Customers with High-quality SiC, Sapphire Wafers and Substrates
Products Silicon Carbide Wafer (SiC Wafer) Silicon Carbide Epitaxial Wafer Sapphire Substrate Wafer Quartz glass wafer CVD Diamond Substrate AlN on Sapphire Epitaxial Wafer Laser processing
Technical Support
About Us Company Profile Blogs
Contact TEl:+86 18961736370 E-mail:anna@jxtwafer.com Address: No.79 Zhongshan South Road, Wuxi City, China.

2022 © SiC Wafers and GaN Wafers Manufacturer 网站统计