In electric vehicles, renewable energy systems, rail transit, and even the coming wave of 6G communication, one material is becoming the key to technological transformation — silicon carbide (SiC) single-crystal substrates.
As the core material of third-generation semiconductors, SiC is redefining the limits of power electronics and RF device performance through its exceptional physical properties.
Compared with traditional silicon materials,
silicon carbide offers four major physical advantages:
Wide Bandgap: Enables operation under higher voltages and temperatures.
High Breakdown Electric Field: Ideal for high-voltage, high-power applications.
High Thermal Conductivity: About 3–3.5 times that of silicon, significantly reducing chip junction temperature.
High Electron Saturation Velocity: Supports higher switching frequencies and greater energy conversion efficiency.
These properties allow SiC devices to operate stably under
high temperature, high voltage, and high frequency conditions — making it the ideal material for next-generation power and RF systems.
2. Key Application Fields of SiC Substrates
The following table provides an overview of where
SiC substrates are used and the key advantages they deliver:
| Application Field |
Specific Scenario |
Core Advantages of SiC Substrate |
| Electric Vehicles & Charging Infrastructure |
On-board inverters, OBC, DC-DC converters, fast chargers |
High voltage resistance, high frequency, high thermal conductivity: improved energy efficiency, reduced system size and weight, extended driving range. |
| Wireless Communication Infrastructure |
5G/6G base station RF power modules |
High frequency, high power: enhanced signal transmission efficiency and base station power capacity. |
| Rail Transit & Smart Grids |
High-speed train converters, smart grid transmission systems |
High voltage resistance and reliability: suitable for high-voltage environments, improved grid control and system stability. |
| Optics & AR Applications |
AR waveguide lenses, Micro-LED substrates |
Excellent optical properties: high refractive index and precision, enabling high-brightness displays. |
3. Technology Development Trends: Toward Larger and Higher-Quality Wafers
1. Large-Size Substrates: An Industry Trend
SiC substrates are evolving from 4-inch and 6-inch to
8-inch and even 12-inch wafers.
The
12-inch SiC substrate offers major benefits:
Compatibility with existing
12-inch silicon wafer production lines;
Higher chip yield per wafer;
Significant cost reduction.
Several Chinese companies, including
TankeBlue, TianKeheda, and SICC, have announced successful development of
12-inch SiC substrates, marking a key milestone toward mass production and industrial scalability.
2. High Quality: The Prerequisite for Applications
Scaling up wafer size brings new technical challenges — particularly
defect control and
warpage.
Substrate warpage can seriously affect epitaxial growth uniformity and chip yield. To address this, the industry is:
Optimizing grinding and polishing sequences;
Adopting dynamic thermal annealing techniques;
Improving crystal growth and stress management;
to ensure superior flatness and structural integrity of the substrate.
4. Thermal Management: SiC’s Hidden Superpower
The inherently
high thermal conductivity of
silicon carbide makes it a game-changer for thermal management — a crucial factor for high-power and high-frequency devices.
Core Advantages:
1.
Efficient Heat DissipationDuring device operation,
SiC substrates act as a “thermal expressway,” rapidly conducting heat from the chip junction to the package or heatsink, preventing thermal buildup.
2. Higher Power DensitySuperior heat dissipation enables higher output power in a smaller footprint — a key to compact, lightweight designs.
3. Enhanced Reliability and LifetimeLower operating junction temperatures significantly extend device lifespan and ensure stable operation in harsh environments such as electric vehicles and industrial systems.
5. Application Flow Overview (Thermal Perspective)
SiC Substrate → High Thermal Conductivity → Efficient Heat Dissipation → Enhanced Application Performance
| Application Area |
Example Device |
Key Benefits |
| Power Electronics |
EV inverters / OBC |
Increased power density and reliability |
| RF Communication |
5G / Radar power amplifiers |
Improved output power and signal linearity |
| Optoelectronics |
AR glasses / Micro-LED |
Eliminates “thermal barriers,” enables high-brightness displays |
Across power, RF, and optical domains,
thermal conductivity is the shared foundation enabling
SiC substrates to deliver high-performance results.
6. Conclusion: Accelerating into the Silicon Carbide Era
Silicon carbide substrates are entering a
golden era of rapid development and expanding applications.
They are not just enhancing performance in power electronics and RF systems — they are also driving the global transition toward cleaner transportation and smarter energy networks.
As
large-diameter wafer production becomes mainstream and
manufacturing costs continue to drop,
SiC substrates will extend their reach across an even broader range of high-efficiency, high-performance applications.
Silicon carbide is more than just a material — it is the
foundation of a high-performance, energy-efficient future.
About Us · JXT Technology Co., Ltd.
JXT Technology Co., Ltd. specializes in the research, development, and supply of
silicon carbide (SiC) materials.
We offer 2-inch to
8-inch SiC substrates and wafers, with customizable thickness, dimensions, and cutting specifications to meet diverse needs in R&D, power device fabrication, and RF module development.
For detailed product information or sample requests, please contact us — JXT Technology looks forward to advancing the future of wide bandgap semiconductor innovation together.
