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HOME > PRODUCTS > The 4th Semiconductors Wafer
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β-Ga2O3 substrate

Specific Information
High-quality β-Ga2O3 single crystals are grown by edge-defined film-fed growth(EFG).β-Ga2O3 has the very large bandgap,so it can be used for power devices, ultraviolet detectors, and high-energy ray detectors. β-Ga2O3 also appears promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter.
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  • specification
  • Properties
  •                               
     
    1. Gallium Oxide Substrate  β-Ga2O3 <100>
     
    Item Gallium Oxide Substrate  β-Ga2O3 <100> 
    Diameter 5*5mm 10*10mm 50.8±0.5mm 100±0.5mm
    Thickness 500±30μm
    Surface Orientation <100>  ± 1.0°
    Doping Sn-doping Fe-doping Mg-doping UID
    Resistivity 0.01~0.05 ohm.cm ＞1E10 ohm.cm ＞1E10 ohm.cm 0.1~1 ohm.cm
    Doping Concertration ~5E18 cm-3 Insulated Insulated <5E17 cm-3
    Surface Finish SSP DSP Grind Slice
    Roughness <0.5nm <0.5nm <5μm N/A
    FWHM ＜150 arc sec

    2. Gallium Oxide Substrate β-Ga2O3 <001> <-201> <010>
     
    Item Gallium Oxide Substrate β-Ga2O3 <001> <-201> <010>
    Diameter 5*5mm 10*10mm 50.8±0.5mm
    Thickness 500μm
    Surface Orientation <001>  ± 1.0° <-201>  ± 1.0° <010>  ± 1.0°
    Doping Sn-doping Fe-doping UID
    Resistivity 0.01~0.05 ohm.cm ＞1E10 ohm.cm 0.1~1 ohm.cm
    Doping Concertration ~5E18 cm-3 Insulated <5E17 cm-3
    Surface Finish SSP DSP Grind
    Roughness <0.5nm <0.5nm <5μm
    FWHM ＜150 arc sec

    3. Sample testing data

    ● XRD crystal quality spectrum of n-type (001) β-Ga2O3



    4. Customization specifications：

    * 2~4inch Ga2O3 on Ga2O3 Homoepitaxial wafer（by HVPE & MBE).
    * Various sizes and shapes such as 5*5mm,10*10mm.
    * Various orientations such as (001),(100),(010),(-201).
    * Various types like Fe-doped,Si-doped,undoped
    * Various surface roughness such as slicing,lapping,polishing.

  • Gallium(III) oxide(Ga2O3)is an inorganic compound and ultrawide bandgap of over 4.5 eV semiconductor.There are Five types of Ga2O3 polymorphs (α,β,γ,δ,ε), and the β phase with a melting point of 1900 ˚C is the most stable form.β-Ga2O3 has the β-gallia monoclinic structure with lattice constants of 1.22nm, 0.3nm, and 0.58nm in the a,b,c axes,and the angle between the a and c axes is about 104°.

     

    Crystal Structure Monoclinic
    Lattice Constant(nm) a=12.23Å
    b=3.04Å 
    c=5.80Å
    Density(g/cm3) 5.95
    Melting point（℃） 1900
    Mohs Hardness(mohs) 5~6
    Dielectric Constant 10
    Band Gap(eV) 4.8
    Breakdown Electrical Field (MV/cm) 10.3
    Thermal Conductivity(W/cm.K) 0.11-0.27
    Thermal Expansion  a=4.70×10-6/k
    b=5.45×10-6/k
    c=5.35×10-6/k

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